2.0-20.0 ghz gaas mmic 1w power amplifier page 1 of 5 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. cmm0016 october 2006 - rev 13-oct-06 (ta= 25c, vdd = 12v) 1 x a m p y t n i m s t i n u s r e t e m a r a p 0 . 0 2 0 . 2 z h g e g n a r y c n e u q e r f 5 . 2 1 5 . 8 b d n i a g r a e n i l 5 . 1 b d s s e n t a l f n i a g power output: 2-18 ghz (@1 db gain compression) dbm 28.5 power output: 2-20 ghz (@1 db gain compre ssion) dbm 26.5 0 . 5 m b d ) y c n e u q e r f g n i t a r e p o r e v o ( n o i t a i r a v b d 1 p 5 . 9 2 m b d z h g 8 1 - 2 : r e w o p t u p t u o d e t a r u t a s 5 . 7 2 m b d z h g 0 2 - 2 : r e w o p t u p t u o d e t a r u t a s 0 . 0 1 - b d s s o l n r u t e r t u p n i 0 . 0 1 - b d s s o l n r u t e r t u p t u o 0 3 7 0 9 6 0 5 6 a m t n e r r u c 7 . 5 1 w / c e c n a t s i s e r l a m r e h t stability 2 unconditionally stable absolute maximum ratings 1 g n i t a r r e t e m a r a p drain voltage 9.0v (min.) / 13.0v (max.) a m 0 5 7 t n e r r u c n i a r d continuous power dissipation 9.5 w m b d 0 2 r e w o p t u p n i storage temperature -50c to +150c channel temperature 175c operating backside temperature -40c to (see note 2) die attach and bonding procedures die attach: eutectic die attach is recommended. for eutec- tic die attach: preform: ausn (80% au, 20% sn); stage temperature: 290c, 5c; handling tool: tweezers; time: 1 min or less. wire bonding: wire size: 0.7 to 1.0 mil in diameter (pre- stressed); thermocompression bonding is preferred over thermosonic bonding. for thermocompression bonding: stage temperature: 250c; bond tip temperature: 150c; bonding tip pressure: 18 to 40 gms depending on size of wire. chip diagram notes: 1. operation outside these limits can cause permanent damage. 2. calculation maximum operating temperature: tmax = 175?(pdis [w] x 15.7) [c]. units: mm notes: 1. tested on celeritek connectorized evaluation board (standard assembly condition detailed on page 4). 2. stability factor measured on-wafer. features small size: 2.32x1.30x0.076mm integrated on-chip dc blocking single bias operation directly cascadable - fully matched unconditionally stable p1db: 29 dbm, typ. @ 18 ghz linear gain: 9.5 db, typ. @ 18 ghz phemt technology silicon nitride passivation specifications
2.0-20.0 ghz gaas mmic 1w power amplifier page 2 of 5 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. cmm0016 october 2006 - rev 13-oct-06 typical on-wafer scattering parameters (vd = +12v, idd = 700 ma, t = 25c, device in a 50 ohm system) frequency s 11 s 21 s 12 s 22 (mhz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 0.1 0.895 -27.46 0.374 -118.79 0.001 179.07 0.982 -30.49 1.1 0.224 -94.72 2.819 -167.62 0.001 10.30 0.371 172.50 2.1 0.120 -115.66 2.845 137.27 0.001 161.31 0.184 155.95 3.1 0.132 -120.35 2.912 98.39 0.001 -24.81 0.109 176.74 4.1 0.116 -142.53 2.906 64.29 0.001 99.46 0.134 -148.11 5.1 0.090 -159.80 2.870 31.44 0.000 -18.80 0.201 -144.37 6.1 0.058 -155.91 2.848 -0.20 0.000 -15.21 0.254 -152.76 7.1 0.045 -135.98 2.839 -31.59 0.001 -9.90 0.273 -163.80 8.1 0.056 -111.34 2.863 -62.57 0.001 -17.50 0.256 -173.33 9.1 0.082 -107.92 2.929 -94.08 0.001 -40.23 0.214 -176.04 10.1 0.105 -116.81 3.014 -126.53 0.002 -66.05 0.186 -165.38 11.1 0.112 -130.45 3.087 -160.15 0.003 -95.26 0.221 -153.79 12.1 0.100 -145.03 3.119 165.56 0.003 -127.63 0.285 -157.63 13.1 0.065 -154.88 3.119 131.34 0.004 -150.95 0.321 -171.26 14.1 0.026 -114.03 3.123 97.11 0.005 -177.36 0.305 170.18 15.1 0.072 -60.29 3.163 62.54 0.006 157.71 0.223 149.10 16.1 0.137 -72.11 3.237 26.78 0.007 130.91 0.078 131.73 17.1 0.185 -90.65 3.312 -10.92 0.009 105.19 0.105 -99.62 18.1 0.202 -109.59 3.326 -50.17 0.011 69.44 0.264 -123.96 19.1 0.182 -125.30 3.296 -90.24 0.011 34.20 0.348 -155.20 20.1 0.134 -132.98 3.213 -131.48 0.012 4.93 0.319 168.29 21.1 0.105 -107.03 3.088 -172.66 0.014 -33.95 0.172 115.92 22.1 0.174 -94.92 3.039 145.86 0.015 -73.77 0.128 -27.54 23.1 0.247 -110.42 3.136 101.21 0.018 -111.05 0.322 -99.37 24.1 0.272 -132.47 3.242 47.32 0.023 -158.10 0.393 -159.52 25.1 0.231 -160.25 2.672 -12.38 0.024 149.27 0.210 107.34 26.1 0.137 -141.31 2.001 -56.79 0.022 119.19 0.301 -40.67 27.1 0.196 -146.43 2.259 -104.68 0.028 69.82 0.492 -112.02 28.1 0.234 -150.80 2.569 153.51 0.030 -17.00 0.547 109.01 29.1 0.349 170.45 0.720 68.96 0.006 -100.97 0.501 -21.16 30.1 0.386 130.23 0.247 26.46 0.002 -28.35 0.584 -59.24 31.1 0.428 92.93 0.104 -5.39 0.003 21.66 0.646 -78.61 32.1 0.480 60.25 0.042 -28.72 0.003 -5.04 0.707 -91.05 33.1 0.539 34.23 0.023 -53.32 0.001 11.16 0.755 -101.84 34.1 0.597 12.71 0.014 -63.64 0.005 -1.35 0.789 -111.75 35.1 0.658 -4.54 0.013 -90.12 0.010 -44.00 0.789 -123.00 36.1 0.706 -19.16 0.007 -169.84 0.008 -171.43 0.763 -120.14 37.1 0.751 -31.72 0.004 138.88 0.002 177.92 0.840 -127.28 38.1 0.790 -42.32 0.001 141.98 0.002 68.47 0.867 -134.25 39.1 0.826 -52.12 0.003 125.45 0.003 -55.70 0.888 -140.59 40.1 0.856 -60.30 0.001 -30.91 0.002 -147.28 0.896 -146.39 s-parameter data files are available online at: www.mimixbroadband.com
2.0-20.0 ghz gaas mmic 1w power amplifier page 3 of 5 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. cmm0016 cmm0016 typical on-wafer s-parameter data 12v, 660ma -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 frequency (ghz) linear gain (db), k-factor -35 -30 -25 -20 -15 -10 -5 0 5 10 15 s11, s22 (db) s21 k-factor s11 s22 october 2006 - rev 13-oct-06 connectorized test fixture vdd=12v, idd=720ma 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35.0 0 2 4 6 8 101214161820 fr e que ncy (ghz ) output power (dbm) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 pae (%) psat p1db pae amplifier measurements
2.0-20.0 ghz gaas mmic 1w power amplifier page 4 of 5 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. cmm0016 assembly example n ote: 1. e u tectic a tt a ch o n a t le a st 30 m il thick c uw o r c u mo c arr ie r is r eco mm e nd . 2. fo r e va l ua tio n , a 1.4 m il w i r e d i am ete r lithi um g ol d a i r coil h a s b ee n u se d . october 2006 - rev 13-oct-06
2.0-20.0 ghz gaas mmic 1w power amplifier page 5 of 5 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. cmm0016 october 2006 - rev 13-oct-06 handling and assembly information caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not ingest. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support policy - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanro om conditions at an appropriately grounded anti-static workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die attachment - gaas products from mimix broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxies are tanaka ts3332ld, die mat dm6030hk or dm6030hk-pt cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. for additional information please see the mimix "epoxy specifications for bare die" application note. if eutectic mounting is used, then a fluxless gold-tin (ausn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-tin eutectic (80% au 20% sn) has a melting point of approximately 280o c (note: gold germanium should be avoided). the work station temperature should be 310o c +/- 10o c. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo- compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters. bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. 2 ordering information the cmm0016-bdis available in bare die and is shipped in gel pak. part number for ordering cmm0016-bd package bare die
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